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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF5007/D
The RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode
The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 Volt portable FM equipment. * Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 7.0 Watts Power Gain = 10 dB Min Efficiency = 50% Min * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * All Gold Metal for Ultra Reliability * Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive * True Surface Mount Package * Available in Tape and Reel by Adding R1 Suffix to Part Number. R1 Suffix = 500 Units per 16 mm, 7 inch Reel.
MRF5007 MRF5007R1
7.0 W, 7.5 Vdc 512 MHz N-CHANNEL BROADBAND RF POWER FET
CASE 430B-02, Style 1
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 Meg Ohm) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 25 25 20 4.5 25 0.14 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 3.8 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2
MOTOROLA RF (c) Motorola, Inc. 1995 DEVICE DATA
MRF5007 MRF5007R1 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 2.5 mAdc) Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 10 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 7.0 W, IDQ = 75 mA) Drain Efficiency (VDD = 7.5 Vdc, Pout = 7.0 W, IDQ = 75 mA) R3 C8 + C10 C9 R4 R2 L2 N1 RF INPUT Z1 C1 Z2 C2 Z3 R1 Z4 C4 L1 Z5 Z6 Z7 C5 C3 DUT Z8 Z9 C6 C7 Z10 N2 RF OUTPUT C11 C12 f = 512 MHz f = 512 MHz Gps 10 50 11.5 55 -- -- dB % Ciss Coss Crss -- -- 10 32 63 13 -- -- 16 pF pF pF VGS(th) VDS(on) gfs 1.25 -- 0.9 2.2 -- -- 3.5 0.3 -- Vdc Vdc S V(BR)DSS IDSS IGSS 25 -- -- -- -- -- -- 1.0 1.0 Vdc mAdc Adc Symbol Min Typ Max Unit
B1 + C13 VDD
VGG
B1 C1, C7 C2, C6 C3 C4 C5 C8, C13 C9, C12 C10 C11 L1 L2 N1, N2 R1 R2
Fair Rite Products Short Ferrite Bead (2743021446) 100 pF, 100 mil Chip 0-20 pF, Johanson 47 pF, Miniature Clamped Mica Capacitor 16 pF, Miniature Clamped Mica Capacitor 21 pF, Miniature Clamped Mica Capacitor 10 F, 50 V, Electrolytic 0.1 F, Chip Capacitor 1000 pF, 100 mil Chip 140 pF, 100 mil Chip 7 Turns, 0.076 ID, #24 AWG Enamel 5 Turns, 0.126 ID, #20 AWG Enamel Type N Flange Mount 39 , 1/4 W Carbon 30 , 0.1 W Chip
R3 1.0 k, 0.1 W Chip R4 1.1 M, 1/4 W Carbon Z1, Z10 0.594 x 0.08 Microstrip Z2 0.811 x 0.08 Microstrip Z3 0.270 x 0.08 Microstrip Z4 0.122 x 0.08 Microstrip Z5 0.303 x 0.08 Microstrip Z6 0.211 x 0.08 Microstrip Z7 0.084 x 0.08 Microstrip Z8 0.060 x 0.08 Microstrip Z9 1.343 x 0.08 Microstrip Board -- Glass Teflon(R), 31 mils Note: BeCu part locators (0.147 x 0.093) Note: soldered onto Z5 and Z6
Figure 1. 512 MHz Narrowband Test Circuit
MRF5007 MRF5007R1 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
12 P out , OUTPUT POWER (WATTS) P out , OUTPUT POWER (WATTS) 10 Pin = 700 mW 10 f = 400 MHz 470 MHz 520 MHz 500 mW 300 mW 8
8
6
6 IDQ = 75 mA f = 400 MHz 4 6 7 8 9 VDD, SUPPLY VOLTAGE (VOLTS) 10
4
VDD = 7.5 Vdc IDQ = 75 mA 0 0.5 1 1.5 Pin, INPUT POWER (WATTS) 2
2
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
10 Pin = 700 mW P out , OUTPUT POWER (WATTS) 500 mW
10 Pin = 700 mW P out , OUTPUT POWER (WATTS) 500 mW 8 300 mW
8
300 mW
6 IDQ = 75 mA f = 470 MHz 4 6 7 8 9 VDD, SUPPLY VOLTAGE (VOLTS) 10
6 IDQ = 75 mA f = 520 MHz 4 6 7 8 9 VDD, SUPPLY VOLTAGE (VOLTS) 10
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
10 P out , OUTPUT POWER (WATTS)
4
f = 400 MHz 8 520 MHz TYPICAL DEVICE SHOWN VGS(th) = 1.6 V VDD = 7.5 Vdc Pin = 0.7 W 4 0 1 2 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3
I D, DRAIN CURRENT (AMPS)
3
2 TYPICAL DEVICE SHOWN 1 VDS = 10 Vdc 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 5
6
Figure 6. Output Power versus Gate Voltage
Figure 7. Drain Current versus Gate Voltage
MOTOROLA RF DEVICE DATA
MRF5007 MRF5007R1 3
150 125 C, CAPACITANCE (pF) 100 75 50 25 0 Coss Ciss Crss 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 20 VGS = 0 Vdc f = 1 MHz
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.06 1.04 1.02 900 mA 1.00 0.98 300 mA 0.96 0.94 0.92 - 25 VDD = 7.5 Vdc 0 25 50 75 100 TC, CASE TEMPERATURE (C) IDQ = 2.1 A 1.5 A
75 mA 125 150
Figure 8. Capacitance versus Voltage
Figure 9. Gate-Source Voltage versus Case Temperature
5
I D, DRAIN CURRENT (AMPS)
4
3 TC = 25C 2
1
0
1
10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
100
Figure 10. Maximum Rated Forward Biased Safe Operating Area
MRF5007 MRF5007R1 4
MOTOROLA RF DEVICE DATA
520 460 f = 400 MHz ZOL* VDD = 7.5 Vdc, IDQ = 75 mA, Pout = 7.0 W f MHz 400 Zo = 10 520 Zin f = 400 MHz 430 460 460 490 520 Zin Ohms 1.4 - j5.4 1.4 - j4.5 1.3 - j4.2 1.2 - j4.0 1.0 - j3.7 ZOL* Ohms 1.0 - j0.6 0.9 - j0.5 0.9 - j0.3 0.9 - j0.1 0.9 + j0.1
Zin = Conjugate of source impedance with parallel 39 Zin = resistor and 47 pF capacitor in series with gate. ZOL* = Conjugate of the load impedance at given output ZOL* = power, voltage, frequency, and D > 50%.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5007 MRF5007R1 5
Table 1. Common Source Scattering Parameters (VDS = 7.5 Vdc) ID = 75 mA
f MHz 50 100 200 300 400 500 700 850 1000 1200 |S11| 0.75 0.73 0.75 0.78 0.81 0.83 0.87 0.89 0.91 0.92 S11 S21 S12 S22
6
- 132 - 152 - 162 - 164 - 166 - 167 - 170 - 171 - 173 - 174
|S21| 6.05 3.13 1.52 0.95 0.66 0.49 0.30 0.22 0.17 0.13
6
103 88 71 59 49 40 27 19 13 7
|S12| 0.08 0.08 0.08 0.07 0.06 0.06 0.05 0.04 0.03 0.03
6
15 1 - 13 - 22 - 29 - 35 - 43 - 46 - 48 - 48
|S22| 0.76 0.80 0.83 0.85 0.88 0.90 0.93 0.94 0.96 0.97
6
- 156 - 166 - 171 - 172 - 173 - 174 - 175 - 177 - 178 - 180
ID = 500 mA
f MHz 50 100 200 300 400 500 700 850 1000 1200 |S11| 0.88 0.87 0.87 0.87 0.88 0.88 0.89 0.90 0.90 0.91 S11 S21 S12 S22
6
- 152 - 166 - 172 - 175 - 176 - 176 - 177 - 178 - 178 - 179
|S21| 6.89 3.50 1.74 1.15 0.84 0.66 0.45 0.35 0.28 0.22
6
100 91 81 74 68 63 53 46 40 34
|S12| 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.02 0.02
6
12 4 -2 -6 -8 - 11 - 14 - 15 - 15 - 14
|S22| 0.87 0.88 0.89 0.89 0.90 0.90 0.92 0.92 0.93 0.94
6
- 172 - 176 - 178 - 178 - 179 - 179 - 179 - 180 179 179
ID = 1.5 A
f MHz 50 100 200 300 400 500 700 850 1000 1200 |S11| 0.91 0.91 0.91 0.91 0.91 0.91 0.92 0.92 0.93 0.93 S11 S21 S12 S22
6
- 155 - 167 - 174 - 176 - 177 - 177 - 178 - 178 - 179 - 179
|S21| 6.67 3.38 1.69 1.12 0.83 0.65 0.45 0.36 0.29 0.23
6
99 91 83 77 72 67 57 51 46 39
|S12| 0.03 0.03 0.03 0.03 0.02 0.02 0.02 0.02 0.02 0.02
6
11 5 1 -1 -2 -3 -4 -4 -3 0
|S22| 0.91 0.92 0.92 0.92 0.93 0.93 0.93 0.94 0.94 0.95
6
- 174 - 177 - 179 - 179 - 180 180 179 179 178 177
MRF5007 MRF5007R1 6
MOTOROLA RF DEVICE DATA
DESIGN CONSIDERATIONS The MRF5007 is a common-source, RF power, N-Channel enhancement mode, Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, "FETs in Theory and Practice," is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications.
coefficient at high temperatures because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high -- on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, V GS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended with appropriate RF decoupling. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since the MRF5007 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. See Figure 7 for a typical plot of drain current versus gate voltage. RF power FETs operate optimally with a quiescent drain current (I DQ), whose value is application dependent. The MRF5007 was characterized at IDQ = 75 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF5007 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. Figure 6 is an example of output power variation with gate-source bias voltage. This characteristic is very dependent on frequency and load line.
DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
SOURCE
DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed V DS(on). For MOSFETs, V DS(on) has a positive temperature
MOTOROLA RF DEVICE DATA
MRF5007 MRF5007R1 7
MOUNTING The specified maximum thermal resistance of 7.0C/W assumes a majority of the 0.137 x 0.185 source contact on the back side of the package is in good contact with an appropriate heat sink. In the test fixture shown in Figure 1, the device is clamped directly to a copper pedestal. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. It is recomended that this temperature not exceed 100C for any operating condition. Contact customer service for additional information on thermal considerations for mounting. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF5007. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Both small-signal S-parameters and large-signal impedances
are provided. While the S-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF power MOSFETs. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of the MRF5007 yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two port stability analysis with the MRF5007 S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters," for a discussion of two port network theory and stability.
MRF5007 MRF5007R1 8
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
SEATING PLANE
C
V
A
N
D S
R
E
B
CASE 430B-02 ISSUE A
MOTOROLA RF DEVICE DATA
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L
U
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 2 DIM A B C D E L N R S U V INCHES MIN MAX 0.260 0.270 0.200 0.210 0.090 0.104 0.020 0.040 0.022 0.028 0.115 0.125 0.226 0.236 0.166 0.176 0.019 0.029 0.010 0.020 0.010 0.020 MILLIMETERS MIN MAX 6.60 6.86 5.08 5.33 2.29 2.64 0.51 1.02 0.56 0.71 2.92 3.18 5.74 5.99 4.22 4.47 0.48 0.74 0.25 0.51 0.25 0.51
EE EE EE EEEE EE EE EEEE EE EEEE
3
1
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
MRF5007 MRF5007R1 9
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MRF5007 MRF5007R1 10
MRF5007/D MOTOROLA RF DEVICE DATA

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